The three day “International Symposium on Modeling of Crystal Growth Processes and Devices” is highly beneficial for the researchers who are working in the field of modeling and simulation of various crystal growth processes, semiconductor devices, NLO and Piezoelectric devices. The development of modern devices requires materials with a high degree of crystallographic perfection, low defect density and uniform dopant distribution throughout the crystals. Numerical modeling plays a vital role in developing optimised process conditions for growing high quality crystals nd designing device structures for efficient electronic and optoelectronic devices.
The authors are requested to mail their abstracts in word format for oral/poster presentations to firstname.lastname@example.org. The abstract is limited to one page including figures, tables and references. The title of the paper should be in Times New Roman with the font size of 14 and the rest of the text in 12 font with 1.5 line spacing. The selected 10 abstracts will be allowed for ORAL presentation.
Registration fee covers conference kit, lunch, refreshment and certificate. The registration fee may be paid in the form of Demand Draft in favour of “The Principal, SSN College of Engineering”, payable at Chennai. It should reach the Convener on or before 31th January 2019.
The best poster presentation awards will be given separately to Process Modeling as well as Devices Modeling. No award for oral presentation.
Separate accommodation for gents and ladies will be provided on payment basis at institute hostel based on request.